Open AccessSurface morphology of GaN nucleation layer grown by MOCVD with different carrier gas
Author(s) -
Xingliang Su,
Teng Ye,
Shen Wang,
Yujun Shi,
Leilei Fan,
Lei Liu,
Geng Zhang,
Xurong Shi,
Min Wei,
Haitao Zhou,
HuJun Jiao
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5033939
Subject(s) - nucleation , metalorganic vapour phase epitaxy , chemical vapor deposition , layer (electronics) , materials science , sapphire , substrate (aquarium) , hydrogen , crystal (programming language) , chemical physics , wide bandgap semiconductor , nitrogen , chemical engineering , nanotechnology , chemistry , optoelectronics , epitaxy , optics , laser , physics , oceanography , organic chemistry , engineering , geology , computer science , programming language
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