Open AccessOn the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2
Author(s) -
Franz P. G. Fengler,
Michael Hoffmann,
Stefan Slesazeck,
Thomas Mikolajick,
Uwe Schroeder
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5026424
Subject(s) - ferroelectricity , condensed matter physics , hysteresis , materials science , trapping , electron , vacancy defect , capacitor , chemical physics , physics , optoelectronics , voltage , ecology , quantum mechanics , dielectric , biology
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