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Investigation of electronic structures and optical properties of β-Si3N4 doped with IV A elements: A first-principles simulation
Author(s) -
Xuefeng Lu,
Xu Gao,
Junqiang Ren,
Cuixia Li,
Xin Guo,
Yupeng Wei,
Peiqing La
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5021163
Subject(s) - band gap , doping , mulliken population analysis , materials science , microelectronics , photocurrent , electronic structure , photoelectric effect , density functional theory , electronic band structure , silicon , dopant , optoelectronics , condensed matter physics , molecular physics , chemistry , computational chemistry , physics

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