
Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness
Author(s) -
Kamyar Ahmadi-Majlan,
Tongjie Chen,
Zheng Hui Lim,
Patrick Conlin,
Ricky Hensley,
Matthew Chrysler,
Dong Su,
Hanghui Chen,
Divine P. Kumah,
J. H. Ngai
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5018069
Subject(s) - heterojunction , materials science , metal–insulator transition , epitaxy , condensed matter physics , scattering , insulator (electricity) , optoelectronics , mott insulator , mott transition , metal , layer (electronics) , nanotechnology , optics , metallurgy , physics , superconductivity , hubbard model