Open AccessInterplay between ferroelectric and resistive switching in doped crystalline HfO2
Author(s) -
Benjamin Max,
Milan Pešić,
Stefan Slesazeck,
Thomas Mikolajick
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5015985
Subject(s) - ferroelectricity , materials science , electrode , optoelectronics , stack (abstract data type) , amorphous solid , resistive random access memory , capacitor , ferroelectric capacitor , doping , oxide , switching time , voltage , electrical engineering , dielectric , chemistry , computer science , crystallography , metallurgy , programming language , engineering
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