Open AccessFormation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures
Author(s) -
Shiori Konoshima,
Eisuke Yonekura,
Keisuke Arimoto,
Junji Yamanaka,
Kiyokazu Nakagawa,
Kentarou Sawano
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5011397
Subject(s) - materials science , heterojunction , dislocation , layer (electronics) , condensed matter physics , anisotropy , substrate (aquarium) , optoelectronics , relaxation (psychology) , germanium , strain (injury) , ion implantation , crystallography , silicon , ion , nanotechnology , composite material , optics , chemistry , medicine , psychology , social psychology , oceanography , physics , organic chemistry , geology
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