Open AccessProton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
Author(s) -
Kimberly Collins,
Andrew M. Armstrong,
Andrew A. Allerman,
György Vizkelethy,
Stuart B. Van Deusen,
François Léonard,
A. Alec Talin
Publication year - 2017
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5006814
Subject(s) - materials science , optoelectronics , cathodoluminescence , deep level transient spectroscopy , irradiation , gallium nitride , schottky diode , dislocation , wide bandgap semiconductor , carrier lifetime , band gap , diode , silicon , nanotechnology , luminescence , physics , layer (electronics) , nuclear physics , composite material