Open AccessMechanism of Na accumulation at extended defects in Si from first-principles
Author(s) -
JiSang Park,
Maria K. Y. Chan
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5003385
Subject(s) - impurity , stacking , silicon , grain boundary , materials science , stacking fault , chemical physics , diffusion , condensed matter physics , crystallographic defect , density functional theory , activation energy , degradation (telecommunications) , crystallography , chemistry , computational chemistry , physics , thermodynamics , optoelectronics , composite material , microstructure , telecommunications , organic chemistry , computer science
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