Open AccessEvolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity
Author(s) -
Andrew M. Armstrong,
Andrew A. Allerman
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4996237
Subject(s) - materials science , electrical resistivity and conductivity , dopant , doping , optoelectronics , electrical engineering , engineering