Open AccessRole of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity
Author(s) -
Guangxu Ju,
Masao Tabuchi,
Yoshikazu Takeda,
Hiroshi Amano
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4990687
Subject(s) - materials science , epitaxy , dislocation , photoluminescence , stress relaxation , condensed matter physics , relaxation (psychology) , crystallography , x ray reflectivity , wide bandgap semiconductor , optics , optoelectronics , thin film , layer (electronics) , composite material , nanotechnology , chemistry , creep , physics , psychology , social psychology
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