Open AccessHydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
Author(s) -
Joonho Bang,
Satoru Matsuishi,
Hideo Hosono
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4985627
Subject(s) - hydrogen , thin film transistor , impurity , valence (chemistry) , amorphous solid , materials science , thin film , hydride , semiconductor , chemical physics , ion , inorganic chemistry , crystallography , chemistry , nanotechnology , optoelectronics , organic chemistry , layer (electronics)
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