Open AccessHigh-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping
Author(s) -
Zhenyang Xia,
Kai Zang,
Dong Liu,
Ming Zhou,
Tong-June Kim,
Huilong Zhang,
Muyu Xue,
Jeongpil Park,
Matthew Morea,
Jin-Sook Ryu,
TzuHsuan Chang,
Ji-Soo Kim,
Shaoqin Gong,
Theodore I. Kamins,
Zongfu Yu,
Zhehui Wang,
James S. Harris,
Zhenqiang Ma
Publication year - 2017
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4985591
Subject(s) - responsivity , materials science , optoelectronics , photodetector , ultraviolet , doping , avalanche photodiode , electric field , semiconductor , silicon , avalanche breakdown , optics , breakdown voltage , voltage , detector , physics , quantum mechanics