Open AccessHigh-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping
Author(s) -
Zhenyang Xia,
Kai Zang,
Dong Liu,
Ming Zhou,
Tong-June Kim,
Huilong Zhang,
Muyu Xue,
Jeongpil Park,
Matthew Morea,
Jae Ha Ryu,
TzuHsuan Chang,
Jisoo Kim,
Shaoqin Gong,
T. I. Kamins,
Zongfu Yu,
Zhehui Wang,
James S. Harris,
Zhenqiang Ma
Publication year - 2017
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4985591
Subject(s) - responsivity , materials science , optoelectronics , photodetector , ultraviolet , doping , avalanche photodiode , electric field , semiconductor , silicon , avalanche breakdown , optics , breakdown voltage , voltage , detector , physics , quantum mechanics
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