Open AccessValence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions
Author(s) -
S. D. Harrington,
Abhishek Sharan,
Anthony D. Rice,
J. A. Logan,
Anthony McFadden,
Mihir Pendharkar,
Daniel J. Pennachio,
Nathaniel Wilson,
Zhigang Gui,
Anderson Janotti,
C. J. Palmstrøm
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4985200
Subject(s) - heterojunction , x ray photoelectron spectroscopy , molecular beam epitaxy , materials science , electronic band structure , band offset , valence band , photoemission spectroscopy , band gap , condensed matter physics , analytical chemistry (journal) , optoelectronics , chemistry , epitaxy , nuclear magnetic resonance , physics , layer (electronics) , nanotechnology , chromatography