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We investigate the crystallographic and electronic properties of wurtzite Cr-doped AlN (AlCrN) films (Cr ≤12.0%) that absorb visible light. We confirmed that the films consist of wurtzite columnar single crystals that are densely packed,  c -axis oriented, and exhibit a random rotation along the  a -axis in plane by using transmission electron microscopy. The oxidation state of Cr was found to be 3+ using Cr  K -edge X-ray absorption near edge structure, which implies that Cr can be a substitute for Al 3+  in AlN. The first nearest neighbor distances estimated using Cr  K -edge extended X-ray absorption fine structure (EXAFS) were found to be nearly isotropic for incident light with electric fields that are parallel and perpendicular to the plane. The results of  ab initio  lattice relaxation calculations for the model of wurtzite Al 1-x Cr x N supercell where Cr replaces Al support the EXAFS results. The calculations for the model showed that additional energy bands are formed in the band gap of AlN, in which the Fermi energy ( E   F  ) is present. As expected from the calculation results, the electrical conductivity increases with increase in the Cr concentration, implying that the density of states at  E   F   increases monotonically. From these results, we can conclude that AlCrN films are an intermediate band material with respect to their crystallographic and electric properties.

Crystallographic and electronic properties of AlCrN films that absorb visible light