Effect of disorder on the resistivity of CoFeCrAl films | Zendy

Yunlong Jin | Zendy; Ralph Skomski | Zendy; Parashu Kharel | Zendy; Shah Valloppilly | Zendy; D. J. Sellmyer | Zendy

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Effect of disorder on the resistivity of CoFeCrAl films

Author(s) -

Yunlong Jin,

Ralph Skomski,

Parashu Kharel,

Shah Valloppilly,

D. J. Sellmyer

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4978591

Subject(s) - crystallite , electrical resistivity and conductivity , materials science , epitaxy , condensed matter physics , ferrimagnetism , thin film , sputter deposition , alloy , residual resistivity , sputtering , metallurgy , composite material , nanotechnology , magnetization , magnetic field , physics , layer (electronics) , quantum mechanics , electrical engineering , engineering

Structural and electron-transport properties of thin films of the ferrimagnetic Heusler compound CoFeCrAl have been investigated to elucidate structure-property relationships. The alloy is, ideally, a spin-gapless semiconductor, but structural disorder destroys the spin-gapless character and drastically alters the transport behavior. Two types of CoFeCrAl films were grown by magnetron sputtering deposition at 973 K, namely polycrystalline films on Si substrates and epitaxial films on MgO (001) substrates. The resistivity decreases with increasing temperature, with relatively small temperature coefficients of –0.19 μΩcm/K for the polycrystalline films and –0.12 μΩcm/K for the epitaxial films. The residual resistivity of the polycrystalline films deposited on Si is higher than that of the epitaxial film deposited on MgO, indicating that the polycrystalline films behave as so-called dirty metals

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