Open AccessAn analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers
Author(s) -
R. Gul,
Utpal Roy,
R. B. James
Publication year - 2017
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4978377
Subject(s) - dopant , trapping , doping , deep level transient spectroscopy , indium , materials science , crystallographic defect , charge carrier , analytical chemistry (journal) , penning trap , electron , atomic physics , optoelectronics , chemistry , silicon , physics , crystallography , nuclear physics , ecology , chromatography , biology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom