Open AccessArsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport
Author(s) -
Jason W. Boucher,
Shan W. Boettcher
Publication year - 2017
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4977757
Subject(s) - materials science , vapor phase , chemical vapor deposition , substrate (aquarium) , deep level transient spectroscopy , halide , deposition (geology) , arsenic , oxygen , analytical chemistry (journal) , chemical engineering , optoelectronics , chemistry , metallurgy , environmental chemistry , inorganic chemistry , thermodynamics , geology , silicon , paleontology , oceanography , physics , sediment , engineering , organic chemistry
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