Open AccessUsing gapped topological surface states of Bi2Se3 films in a field effect transistor
Author(s) -
Jifeng Sun,
David J. Singh
Publication year - 2017
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4975819
Subject(s) - topological insulator , surface states , condensed matter physics , transistor , topology (electrical circuits) , band gap , fermi level , context (archaeology) , field effect transistor , materials science , surface (topology) , spin transistor , density of states , physics , optoelectronics , electron , quantum mechanics , spin engineering , spin polarization , geometry , electrical engineering , mathematics , paleontology , voltage , biology , engineering
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