Open AccessHigh-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells
Author(s) -
Yuguo Tao,
Keeya Madani,
Eunhwan Cho,
Brian Rounsaville,
Vijaykumar Upadhyaya,
A. Rohatgi
Publication year - 2017
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4973626
Subject(s) - common emitter , passivation , materials science , wafer , boron , isotropic etching , etching (microfabrication) , optoelectronics , saturation current , oxide , contact resistance , layer (electronics) , analytical chemistry (journal) , nanotechnology , chemistry , voltage , metallurgy , electrical engineering , organic chemistry , engineering , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom