Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations | Zendy

Satoru Yoshimura | Zendy; Satoshi Sugimoto | Zendy; Kensuke Murai | Zendy; Masato Kiuchi | Zendy

Open Access

Low-energy SiC₂H₆⁺ and SiC₃H₉⁺ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations

Author(s) -

Satoru Yoshimura,

Satoshi Sugimoto,

Kensuke Murai,

Masato Kiuchi

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4972206

Subject(s) - ion , irradiation , ion beam , materials science , ion beam deposition , silicon , analytical chemistry (journal) , silicon carbide , raman spectroscopy , mass spectrometry , substrate (aquarium) , atomic physics , chemistry , optoelectronics , optics , physics , nuclear physics , chromatography , oceanography , organic chemistry , metallurgy , geology

We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD) for silicon carbide (SiC) film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100) substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC

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