z-logo
open-access-imgOpen Access
Low operational current spin Hall nano-oscillators based on NiFe/W bilayers
Author(s) -
Hamid Mazraati,
Sunjae Chung,
Afshin Houshang,
Mykola Dvornik,
Luca Piazza,
Fatjon Qejvanaj,
Sheng Jiang,
Tuan Quang Le,
Jonas Weissenrieder,
Johan Åkerman
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4971828
Subject(s) - microwave , spin hall effect , hall effect , spin (aerodynamics) , condensed matter physics , materials science , oscillation (cell signaling) , realization (probability) , nano , spin pumping , optoelectronics , spintronics , magnetoresistance , ferromagnetism , electrical resistivity and conductivity , physics , magnetic field , spin polarization , chemistry , electron , biochemistry , statistics , mathematics , quantum mechanics , composite material , thermodynamics
We demonstrate highly efficient spin Hall nano-oscillators (SHNOs) based on NiFe/beta-W bilayers. Thanks to the very high spin Hall angle of beta-W, we achieve more than a 60% reduction in the auto-oscillation threshold current compared to NiFe/Pt bilayers. The structural, electrical, and magnetic properties of the bilayers, as well as the microwave signal generation properties of the SHNOs, have been studied in detail. Our results provide a promising path for the realization of low-current SHNO microwave devices with highly efficient spin-orbit torque from beta-W. Published by AIP Publishing.

QC 20170215

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom