Low operational current spin Hall nano-oscillators based on NiFe/W bilayers
Author(s) -
Hamid Mazraati,
Sunjae Chung,
Afshin Houshang,
Mykola Dvornik,
Luca Piazza,
Fatjon Qejvanaj,
Sheng Jiang,
Tuan Quang Le,
Jonas Weissenrieder,
Johan Åkerman
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4971828
Subject(s) - microwave , spin hall effect , hall effect , spin (aerodynamics) , condensed matter physics , materials science , oscillation (cell signaling) , realization (probability) , nano , spin pumping , optoelectronics , spintronics , magnetoresistance , ferromagnetism , electrical resistivity and conductivity , physics , magnetic field , spin polarization , chemistry , electron , biochemistry , statistics , mathematics , quantum mechanics , composite material , thermodynamics
We demonstrate highly efficient spin Hall nano-oscillators (SHNOs) based on NiFe/beta-W bilayers. Thanks to the very high spin Hall angle of beta-W, we achieve more than a 60% reduction in the auto-oscillation threshold current compared to NiFe/Pt bilayers. The structural, electrical, and magnetic properties of the bilayers, as well as the microwave signal generation properties of the SHNOs, have been studied in detail. Our results provide a promising path for the realization of low-current SHNO microwave devices with highly efficient spin-orbit torque from beta-W. Published by AIP Publishing.
QC 20170215
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