Open AccessIdentification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes
Author(s) -
Michael Patrick King,
Robert Kaplar,
Jeramy Ray Dickerson,
S. R. Lee,
Andrew A. Allerman,
Mary H. Crawford,
Arthur J. Fischer,
M. J. Marinella,
Jack Flicker,
R. M. Fleming,
I.C. Kizilyalli,
Özgür Aktaş,
Andrew M. Armstrong
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4966903
Subject(s) - materials science , optoelectronics , doping , diode , epitaxy , wide bandgap semiconductor , chemical vapor deposition , dislocation , deep level transient spectroscopy , light emitting diode , gallium nitride , analytical chemistry (journal) , silicon , chemistry , nanotechnology , layer (electronics) , chromatography , composite material