Open AccessRecombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model
Author(s) -
S. M. Myers,
W.R. Wampler,
Normand A. Modine
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4963873
Subject(s) - quantum tunnelling , heterojunction , recombination , bipolar junction transistor , materials science , optoelectronics , diode , semiconductor , effective mass (spring–mass system) , spontaneous emission , carrier lifetime , band diagram , condensed matter physics , chemistry , transistor , physics , silicon , voltage , optics , biochemistry , gene , laser , quantum mechanics
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