Open AccessCharacterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography
Author(s) -
Zhaofeng Gan,
Daniel E. Perea,
Jinkyoung Yoo,
Yang He,
Robert Colby,
Josh E. Barker,
Meng Gu,
Scott X. Mao,
Chongmin Wang,
S. T. Picraux,
David J. Smith,
Martha R. McCartney
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4962380
Subject(s) - electron holography , atom probe , heterojunction , dopant , nanowire , materials science , doping , electron tomography , atom (system on chip) , electron , biasing , optoelectronics , condensed matter physics , nanotechnology , voltage , transmission electron microscopy , scanning transmission electron microscopy , physics , quantum mechanics , computer science , embedded system