Open AccessImpact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy
Author(s) -
Katherine Zaunbrecher,
Darius Kuciauskas,
C. H. Swartz,
P. Dippo,
M. Edirisooriya,
Olanrewaju S. Ogedengbe,
Sandeep Sohal,
Bobby Logan Hancock,
Elizabeth G. LeBlanc,
P.A.R.D. Jayathilaka,
Teresa M. Barnes,
T. H. Myers
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4961989
Subject(s) - photoluminescence , molecular beam epitaxy , heterojunction , dislocation , cadmium telluride photovoltaics , materials science , charge carrier , spontaneous emission , carrier lifetime , recombination , band gap , phonon , non radiative recombination , crystallographic defect , optoelectronics , condensed matter physics , epitaxy , semiconductor , chemistry , silicon , optics , semiconductor materials , nanotechnology , physics , biochemistry , layer (electronics) , gene , laser , composite material