Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy | Zendy

Katherine Zaunbrecher | Zendy; Darius Kuciauskas | Zendy; C. H. Swartz | Zendy; Pat Dippo | Zendy; M. Edirisooriya | Zendy; O. S. Ogedengbe | Zendy; Sandeep Sohal | Zendy; B. Logan Hancock | Zendy; Elizabeth G. LeBlanc | Zendy; P. A. R. D. Jayathilaka | Zendy; Teresa M. Barnes | Zendy; T. H. Myers | Zendy

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Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Author(s) -

Katherine Zaunbrecher,

Darius Kuciauskas,

C. H. Swartz,

Pat Dippo,

M. Edirisooriya,

O. S. Ogedengbe,

Sandeep Sohal,

B. Logan Hancock,

Elizabeth G. LeBlanc,

P. A. R. D. Jayathilaka,

Teresa M. Barnes,

T. H. Myers

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4961989

Subject(s) - photoluminescence , molecular beam epitaxy , heterojunction , dislocation , cadmium telluride photovoltaics , materials science , charge carrier , spontaneous emission , carrier lifetime , recombination , band gap , phonon , non radiative recombination , crystallographic defect , optoelectronics , condensed matter physics , epitaxy , semiconductor , chemistry , silicon , optics , semiconductor materials , nanotechnology , physics , biochemistry , layer (electronics) , gene , laser , composite material

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