Open AccessChemical-free n-type and p-type multilayer-graphene transistors
Author(s) -
D. M. N. M. Dissanayake,
Matthew D. Eisaman
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4960530
Subject(s) - hydrogen silsesquioxane , materials science , doping , graphene , optoelectronics , substrate (aquarium) , fabrication , dopant , nanotechnology , transistor , lithography , field effect transistor , resist , electron beam lithography , layer (electronics) , electrical engineering , medicine , oceanography , alternative medicine , engineering , pathology , voltage , geology
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