Open AccessAn AlN/Al0.85Ga0.15N high electron mobility transistor
Author(s) -
Albert G. Baca,
Andrew Armstrong,
Andrew A. Allerman,
E Douglas,
Carlos Anthony Sanchez,
M. King,
Michael E. Coltrin,
Torben R. Fortune,
Robert Kaplar
Publication year - 2016
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4959179
Subject(s) - optoelectronics , materials science , high electron mobility transistor , heterojunction , transistor , wide bandgap semiconductor , electron mobility , schottky barrier , subthreshold slope , leakage (economics) , threshold voltage , subthreshold conduction , breakdown voltage , voltage , electrical engineering , diode , economics , macroeconomics , engineering
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