A two-step process for growth of highly oriented Sb2Te3 using sputtering | Zendy

Yuta Saito | Zendy; Paul Fons | Zendy; Leonid Bolotov | Zendy; Noriyuki Miyata | Zendy; Alexander V. Kolobov | Zendy; Junji Tominaga | Zendy

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A two-step process for growth of highly oriented Sb2Te3 using sputtering

Author(s) -

Yuta Saito,

Paul Fons,

Leonid Bolotov,

Noriyuki Miyata,

Alexander V. Kolobov,

Junji Tominaga

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4948536

Subject(s) - superlattice , fabrication , annealing (glass) , sputtering , materials science , grain size , thin film , optoelectronics , sputter deposition , nanotechnology , metallurgy , medicine , alternative medicine , pathology

A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides

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