Open AccessGas cluster ion beam assisted NiPt germano-silicide formation on SiGe
Author(s) -
Ahmet Özcan,
C. Lavoie,
Emre Alptekin,
Jean Jordan-Sweet,
F. Q. Zhu,
Allen Leith,
Brian D. Pfeifer,
J. D. LaRose,
N. M. Russell
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4947054
Subject(s) - silicide , materials science , nucleation , epitaxy , cluster (spacecraft) , silicon , ion implantation , optoelectronics , molecular beam epitaxy , diffraction , metal , ion beam , layer (electronics) , ion , nanotechnology , metallurgy , chemistry , optics , organic chemistry , computer science , programming language , physics