Open AccessMorphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate
Author(s) -
Teng Jiang,
Shengrui Xu,
Jincheng Zhang,
Peixian Li,
Jun Huang,
Zeyang Ren,
Jiaduo Zhu,
Zhibin Chen,
Ying Zhao,
Yue Hao
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4944862
Subject(s) - cathodoluminescence , indium , epitaxy , vicinal , materials science , sapphire , substrate (aquarium) , chemical vapor deposition , metalorganic vapour phase epitaxy , optoelectronics , quantum well , optical microscope , crystallography , scanning electron microscope , optics , nanotechnology , luminescence , chemistry , laser , composite material , layer (electronics) , physics , oceanography , geology , organic chemistry
The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward <101̄0>m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL) spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region