Open AccessStress engineering of high-quality single crystal diamond by heteroepitaxial lateral overgrowth
Author(s) -
Y.-H. Tang,
B. Golding
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4941291
Subject(s) - materials science , diamond , chemical vapor deposition , sapphire , raman spectroscopy , crystal (programming language) , layer (electronics) , single crystal , stress (linguistics) , substrate (aquarium) , epitaxy , composite material , optoelectronics , optics , crystallography , laser , chemistry , geology , linguistics , physics , philosophy , oceanography , computer science , programming language
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