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Hole mobility enhancement of MEH-PPV film by heat treatment at Tg
Author(s) -
Daisuke Kajiya,
Tomoyuki Koganezawa,
Kenichi Saitow
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4939135
Subject(s) - homogeneous , annealing (glass) , materials science , electron mobility , diffraction , fermi level , condensed matter physics , thin film , optoelectronics , nanotechnology , optics , composite material , thermodynamics , electron , physics , quantum mechanics
The hole mobility of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) film was measured using the time-of-flight method. The hole mobility was enhanced 4-fold after annealing at around the glass transition temperature (Tg). Optical, atomic force, and Kelvin force microscopies, and grazing-incidence X-ray diffraction measurements indicate the enhancement can be attributed to a homogeneous film structure, a homogeneous Fermi level energy, and a face-on oriented structure, all of which were established by annealing at Tg

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