Epitaxial growth of  M -plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy | Zendy

Shuo-Ting You | Zendy; Ikai Lo | Zendy; Jenn-Kai Tsai | Zendy; Cheng-Hung Shih | Zendy

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Epitaxial growth of M -plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

Author(s) -

Shuo-Ting You,

Ikai Lo,

Jenn-Kai Tsai,

Cheng-Hung Shih

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4937132

Subject(s) - molecular beam epitaxy , materials science , epitaxy , photoluminescence , transmission electron microscopy , rod , microstructure , scanning electron microscope , optoelectronics , wide bandgap semiconductor , substrate (aquarium) , crystallography , nanotechnology , chemistry , composite material , layer (electronics) , medicine , oceanography , alternative medicine , pathology , geology

We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface (101̄0) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers

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