Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes | Zendy

Matteo Meneghini | Zendy; Dandan Zhu | Zendy; C. J. Humphreys | Zendy; M. Berti | Zendy; A. Gasparotto | Zendy; Tiziana Cesca | Zendy; A. Vinattieri | Zendy; F. Bogani | Zendy; Gaudenzio Meneghesso | Zendy; Enrico Zai | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

Author(s) -

Matteo Meneghini,

Dandan Zhu,

C. J. Humphreys,

M. Berti,

A. Gasparotto,

Tiziana Cesca,

A. Vinattieri,

F. Bogani,

Gaudenzio Meneghesso,

Enrico Zai

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4934491

Subject(s) - materials science , rutherford backscattering spectrometry , luminescence , dislocation , quantum efficiency , optoelectronics , acceptor , spectroscopy , diode , light emitting diode , non radiative recombination , secondary ion mass spectrometry , doping , analytical chemistry (journal) , ion , chemistry , semiconductor , thin film , condensed matter physics , nanotechnology , physics , semiconductor materials , organic chemistry , quantum mechanics , chromatography , composite material

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research