z-logo
open-access-imgOpen Access
THz generation mechanisms in the semiconductor alloy, GaAs1−xBix
Author(s) -
C. P. Vaisakh,
A. Mascarenhas,
R. N. Kini
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4933290
Subject(s) - terahertz radiation , common emitter , materials science , femtosecond , excited state , semiconductor , electric field , wide bandgap semiconductor , optoelectronics , laser , band gap , amplitude , polarity (international relations) , atomic physics , optics , physics , chemistry , biochemistry , quantum mechanics , cell

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom