Open AccessPressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si
Author(s) -
Jianbao Zhao,
Zhenxian Liu,
R. A. Gordon,
Kenichi Takarabe,
Joel W. Reid,
John S. Tse
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4933069
Subject(s) - materials science , seebeck coefficient , thermoelectric effect , orthorhombic crystal system , electrical resistivity and conductivity , condensed matter physics , phase transition , doping , fermi level , diffraction , analytical chemistry (journal) , phase (matter) , electron , optics , chemistry , thermodynamics , thermal conductivity , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , composite material
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