Open AccessDemonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
Author(s) -
H. J. Haugan,
Gail J. Brown,
B. V. Olson,
Emil Kadlec,
J. K. Kim,
Eric A. Shaner
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4932056
Subject(s) - superlattice , carrier lifetime , ternary operation , materials science , optoelectronics , band gap , epitaxy , microwave , gallium arsenide , diode , indium arsenide , layer (electronics) , silicon , nanotechnology , physics , quantum mechanics , computer science , programming language
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