Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration | Zendy

Yuta Fujimoto | Zendy; Mutsunori Uenuma | Zendy; Yasuaki Ishikawa | Zendy; Yukiharu Uraoka | Zendy

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Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration

Author(s) -

Yuta Fujimoto,

Mutsunori Uenuma,

Yasuaki Ishikawa,

Yukiharu Uraoka

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4931951

Subject(s) - seebeck coefficient , thermoelectric effect , amorphous solid , materials science , fermi level , electrical resistivity and conductivity , fermi energy , condensed matter physics , percolation (cognitive psychology) , conductivity , analytical chemistry (journal) , thermodynamics , thermal conductivity , chemistry , electrical engineering , composite material , physics , electron , crystallography , chromatography , quantum mechanics , neuroscience , biology , engineering

We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO) thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor (PF) at 300 K had a maximum value of 82 × 10−6 W/mK2, where the carrier density was 7.7 × 1019 cm−3. Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal. The thermoelectric properties were controlled by the relationship between the position of Fermi level and the height of potential energy barriers

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