Open AccessThreshold-voltage modulated phase change heterojunction for application of high density memory
Author(s) -
Baihan Yan,
Hao Tong,
Hang Qian,
Xiangshui Miao
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4931126
Subject(s) - heterojunction , materials science , optoelectronics , leakage (economics) , threshold voltage , phase change memory , transistor , voltage , reverse leakage current , cmos , computer science , electronic engineering , electrical engineering , nanotechnology , engineering , layer (electronics) , diode , schottky barrier , economics , macroeconomics