Open AccessGate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode
Author(s) -
Joonwoo Kim,
Sung Myung,
Hee-Yeon Noh,
Soon Moon Jeong,
Jaewook Jeong
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4931084
Subject(s) - materials science , thin film transistor , graphene , subthreshold conduction , electrode , threshold voltage , optoelectronics , subthreshold slope , amorphous solid , stress (linguistics) , transistor , current (fluid) , voltage , condensed matter physics , electrical engineering , composite material , nanotechnology , layer (electronics) , chemistry , linguistics , physics , organic chemistry , philosophy , engineering
The gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode