Open AccessGrowth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH3 surface preparation
Author(s) -
Emily L. Warren,
A. Kibbler,
Ryan M. France,
Andrew G. Norman,
Paul Stradins,
William E. McMahon
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4929714
Subject(s) - metalorganic vapour phase epitaxy , annealing (glass) , chemical vapor deposition , materials science , epitaxy , in situ , semiconductor , isotropic etching , thin film , etching (microfabrication) , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , chemistry , metallurgy , layer (electronics) , organic chemistry , engineering , chromatography
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