Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors | Zendy

Li Guo | Zendy; Li Qiang Zhu | Zendy; Jian Ning Ding | Zendy; Yu Kai Huang | Zendy

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Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

Author(s) -

Li Guo,

Li Qiang Zhu,

Jian Ning Ding,

Yu Kai Huang

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4928386

Subject(s) - materials science , transistor , electrolyte , neuromorphic engineering , gallium , indium , optoelectronics , facilitation , neural facilitation , dielectric , nanotechnology , artificial neural network , synaptic plasticity , neuroscience , computer science , chemistry , electrical engineering , voltage , electrode , biology , artificial intelligence , biochemistry , receptor , metallurgy , engineering

Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications

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