Open AccessTwo-dimensional strain mapping in semiconductors by nano-beam electron diffraction employing a delay-line detector
Author(s) -
Knut MüllerCaspary,
A. Oelsner,
Pavel Potapov
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4927837
Subject(s) - detector , raster scan , optics , diffraction , materials science , field effect transistor , optoelectronics , transistor , scanning transmission electron microscopy , electron , semiconductor , image resolution , semiconductor detector , physics , scanning electron microscope , line (geometry) , voltage , geometry , mathematics , quantum mechanics
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