Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers | Zendy

Jan Rogge | Zendy; Walid Hetaba | Zendy; J. Schmalhorst | Zendy; H. Bouchikhaoui | Zendy; Patrick Stender | Zendy; D. Baither | Zendy; Guido Schmitz | Zendy; Andreas Hütten | Zendy

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Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

Author(s) -

Jan Rogge,

Walid Hetaba,

J. Schmalhorst,

H. Bouchikhaoui,

Patrick Stender,

D. Baither,

Guido Schmitz,

Andreas Hütten

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4927638

Subject(s) - annealing (glass) , tunnel magnetoresistance , quantum tunnelling , materials science , magnetoresistance , diffusion barrier , condensed matter physics , transmission electron microscopy , barrier layer , amorphous solid , auger electron spectroscopy , analytical chemistry (journal) , nanotechnology , chemistry , crystallography , layer (electronics) , optoelectronics , metallurgy , magnetic field , physics , quantum mechanics , chromatography , nuclear physics

We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs). By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR) ratio of -10% is found for Co2FeAl (24 nm) / BaO (5 nm) / Fe (7 nm) MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM), it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized

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