Open AccessEnhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
Author(s) -
JiHui Yang,
WanJian Yin,
JiSang Park,
James M. Burst,
Wyatt K. Metzger,
T. A. Gessert,
Teresa M. Barnes,
SuHuai Wei
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4926748
Subject(s) - cadmium telluride photovoltaics , doping , dopant , materials science , fermi level , limiting , valence band , condensed matter physics , open circuit voltage , optoelectronics , analytical chemistry (journal) , voltage , chemistry , band gap , physics , electron , mechanical engineering , quantum mechanics , chromatography , engineering
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