Open AccessInjection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors
Author(s) -
R. M. Fleming,
C. H. Seager,
D. V. Lang,
John M. Campbell
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4923358
Subject(s) - deep level transient spectroscopy , carrier lifetime , diode , materials science , charge carrier , optoelectronics , semiconductor , bipolar junction transistor , trapping , semiconductor device , silicon , spectroscopy , transistor , voltage , electrical engineering , nanotechnology , physics , engineering , ecology , layer (electronics) , quantum mechanics , biology