Open AccessTime constant of defect relaxation in ion-irradiated 3C-SiC
Author(s) -
J. B. Wallace,
L. B. Bayu Aji,
Lin Shao,
S. O. Kucheyev
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4921471
Subject(s) - irradiation , annealing (glass) , ion , materials science , crystallographic defect , radiation damage , relaxation (psychology) , time constant , kinetics , ion implantation , atomic physics , radiation , molecular physics , analytical chemistry (journal) , chemistry , crystallography , optics , composite material , nuclear physics , physics , psychology , social psychology , organic chemistry , chromatography , quantum mechanics , electrical engineering , engineering
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