Open AccessA two-dimensional analytical model for short channel junctionless double-gate MOSFETs
Author(s) -
Chunsheng Jiang,
Renrong Liang,
Jing Wang,
Jun Xu
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4921086
Subject(s) - subthreshold conduction , threshold voltage , poisson's equation , drain induced barrier lowering , channel (broadcasting) , mosfet , gate oxide , voltage , materials science , optoelectronics , physics , computational physics , transistor , electrical engineering , engineering , quantum mechanics
A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel region by a method of series expansion similar to Green’s function. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this expression, analytical models of threshold voltage, subthreshold swing, and subthreshold drain current for JLDGMTs were derived. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the 2-D simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLDGMTs and to optimize their device performance
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