Open AccessGrowth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N
Author(s) -
Andrew M. Armstrong,
Michael William Moseley,
Andrew A. Allerman,
Mary H. Crawford,
Jonathan Wierer
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4920926
Subject(s) - doping , materials science , dopant , band gap , deep level transient spectroscopy , semiconductor , acceptor , optoelectronics , condensed matter physics , conduction band , electron , analytical chemistry (journal) , silicon , chemistry , physics , chromatography , quantum mechanics