Synthesis of Cu2O from CuO thin films: Optical and electrical properties
Author(s) -
Dhanya S Murali,
Shailendra Kumar,
R. J. Choudhary,
A. D. Wadikar,
Mahaveer K. Jain,
A. Subrahmanyam
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4919323
Subject(s) - thin film , materials science , annealing (glass) , hall effect , band bending , electron mobility , spectroscopy , sputter deposition , carbon film , cavity magnetron , electrical resistivity and conductivity , analytical chemistry (journal) , optoelectronics , sputtering , nanotechnology , composite material , chemistry , physics , engineering , chromatography , quantum mechanics , electrical engineering
Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour) of magnetron sputtered (at 300 K) CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm), optical transmission 72% (at 600 nm) and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS). CuO thin films show a significant band bending downwards (due to higher hole concentration) than Cu2O thin films
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom